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氮化镓GaN

让禾芯荣之芯跨入电子产品世界的每个领域

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Part No. Technology Package V(BR)DSS (V) Power Dissipation(W) IC (at 25℃) (A) IC (at 100℃) (A) Pulsed Drain Current (A) VGS(V) V(th) Range (V) RDS(ON) @VGS , at 25℃ Typ.mΩ RDS(ON) @VGS , at 25℃ Max.mΩ CISS Typ.pF Qg Typ.(nC)
GaN
FDN5X6-3L
600
29
8
5
31
??20
1.2~2.0
240
290
500
21.5
DFN-8X8-3L
650
32
9
6
45
±30
1.2~2.0
240
290
500
21.5
Gan
DFN-8X8-3L
650
38
9
6
31
??20
1.2~2.0
240
290
500
21.5
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